The direct gap adjustable over a wide range makes these materials very useful for photovoltaic applications because of the possibility of achieving not only multi-junction solar cells with high efficiency, but also third generation types of solar cells such as intermediate band solar cells, based only on the nitride alloys. The energy of the band gap of the ternary or quaternary can be adjusted from infrared to ultraviolet depending on the composition. Among these semiconductors, we find mainly aluminum nitride (AlN), gallium nitride (GaN) and indium nitride (InN), respectively with a gap of 6.2eV, 3.4eV and 0.7eV. They currently represent ideal materials for the development of light emitting diodes (LEDs) operating in the green-blue and UV ranges of the electromagnetic spectrum. This is justified by the fact that III-N semiconductors are robust, having a high thermal conductivity and a high melting point, and, moreover, a direct forbidden band gap.
Semiconductors of the type III-N are of growing interest in the scientific world. Selection and/or peer review under responsibility of The TerraGreen Society. E-mail address: © 2012 Published by Elsevier Ltd. Keywords: solar cell InGaN transport of electrical charges PC1D. In addition, as the IIInitrides have a high absorption coefficient, very thin layers of material are sufficient to absorb most of the light. However, the minority carrier transport is reinforced because of the bias field in the material. It has been shown that solar cells based on InGaN have a very low diffusion length due to the dislocation density, with a carrier lifetime around 9.909 ns. For other parameters, such as generation and recombination, performance of the cell varies monotonically with these settings. The yield obtained for a reference cell is 16.62 % for optimal values of doping of the layers. The aim of this study is therefore to better understand the influence of each parameter of the solar cell for an improved optimization of performance. At present most of the studies of InGaN photovoltaics are conducted on hetero structures. By varying the alloy composition, InGaN can reach all values of bandgap between 3.42eV and 0.7eV, which covers almost the entire solar spectrum. The objective of this work is to study the transport of electrical charges in a solar cell based on InGaN. ^Laboratory of Automation University of Tlemcen B.p.
Benouaz eĪDepartment of Electrical Engineering University of Laghouat, AlgeriaīLaboratory for the study and development of dielectric and Semiconducteur materials, University of Amar Telidji Laghouat, BP 37G, Ghardaia road, Laghouat 03000, Algeria c dThe Nitride Materials and Devices Laboratory,Departments of Physics and Electrical and Computer Engineering, The University of Houston Room 724, S&R1 Bldg, Houston, Texas 77204-5004. Simulation of a solar cell based on InGaN Available online at SciVerse ScienceDirect In addition, as the III nitrides have a high absorption coefficient, very thin layers of material are sufficient to absorb most of the light. It has been shown that solar cells based on InGaN have a very low diffusion length due to the dislocation density, with a carrier lifetime around 9.909ns. The yield obtained for a reference cell is 16.62% for optimal values of doping of the layers. Abstract of research paper on Materials engineering, author of scientific article - L.A.
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